Former Intel CEO Backs Z2RAM Memory Innovation

Former Intel CEO Pat Gelsinger believes Z2RAM technology developed by Georgia Tech researchers may be an exception to the rule of failed memory technologies. Gelsinger stated that there have been no major forms of innovation in memory for three decades. He described Z2RAM as combining the best characteristics of DRAM, SRAM, and flash into a new device. According to Gelsinger, the technology provides better density, speed, and power compared to HBM.

Nagare Labs, founded by Georgia Institute of Technology professors Suman Datta and Shimeng Yu, aims to deliver memory nearly as fast as SRAM at a density closer to DRAM. The technology is built on oxide semiconductors and designed for integration onto compute logic using 3D hybrid bonding. Nagare achieves its density and bandwidth using memory cells based on transistors rather than capacitors. Suman Datta noted that Z2RAM is more like DRAM in functionality because of its storage mechanism. This design makes reading non-destructive because the charge is stored in a transistor.

Investor Playground Global is helping to bankroll Nagare's development efforts after Gelsinger became a partner there last year. Nagare has $5 million from its first seed funding round. The company aims to sample working Z2RAM memory tiles within the next four years and achieve production shipments within the next decade. Shimeng Yu stated that there is currently no standard to integrate this new memory with the accelerator using 3D bonding.